Interface engineering of Ge using thulium oxide: Band line-up study
Identifieur interne : 000647 ( Main/Exploration ); précédent : 000646; suivant : 000648Interface engineering of Ge using thulium oxide: Band line-up study
Auteurs : I. Z. Mitrovic [Royaume-Uni] ; M. Althobaiti [Royaume-Uni] ; A. D. Weerakkody [Royaume-Uni] ; N. Sedghi [Royaume-Uni] ; S. Hall [Royaume-Uni] ; V. R. Dhanak [Royaume-Uni] ; P. R. Chalker [Royaume-Uni] ; C. Henkel [Suède] ; E. Dentoni Litta [Suède] ; P.-E. Hellström [Suède] ; M. Östling [Suède]Source :
- Microelectronic engineering [ 0167-9317 ] ; 2013.
Descripteurs français
- Pascal (Inist)
- Caractéristique optique, Propriété optique, Fonction diélectrique, Grille transistor, Méthode couche atomique, Méthode ALE, Spectre photoélectron RX, Niveau peu profond, Niveau coeur, Mode empilement, Empilement, Bande valence, Discontinuité bande, Rayonnement UV extrême, Variation angulaire, Ellipsométrie spectroscopique, Bande interdite, Point critique, Constante diélectrique, Mesure électrique, Transistor MOSFET, Interface, Germanium, Thulium, Multicouche, Couche ultramince, Alliage Ge Si, 7867, 8530T.
English descriptors
- KwdEn :
- Angular variation, Atomic layer epitaxial growth, Atomic layer method, Band offset, Core levels, Critical points, Dielectric function, Electrical measurement, Energy gap, Extreme ultraviolet radiation, Ge-Si alloys, Germanium, Interfaces, MOSFET, Multilayers, Optical characteristic, Optical properties, Permittivity, Shallow level, Spectroscopic ellipsometry, Stacking sequence, Stacks, Thulium, Transistor gate, Ultrathin films, Valence bands, X-ray photoelectron spectra.
Abstract
This paper investigates the band line-up and optical properties (dielectric function) of Tm2O3/Ge gate stacks deposited by atomic layer deposition. X-ray photoelectron spectroscopy has been performed to ascertain the shallow core levels (Ge3d and Tm4d) in ultra-thin and bulk Tm2O3/Ge stacks as well as valence band maxima in Ge and bulk Tm2O3. The valence band offset of Tm2O3/Ge has been found to be 2.95 ± 0.08 eV. Vacuum ultra violet variable angle spectroscopic ellipsometry studies reveal the indirect band gap nature of Tm2O3, with the value extracted from the Tauc method of 5.3 ± 0.1 eV. A distinct absorption feature is observed at ∼3.2 eV below the band gap of Tm2O3, and clearly distinguished from the Si and Ge critical points. A dielectric constant of 14 to 15 has been derived from the electrical measurements on 5 nm Tm2O3/epi Ge/Si gate stacks. The band line-up study of Tm2O3/Ge implies an acceptable barrier for holes (2.95 eV) and electrons (greater than 1.7 eV) for Ge MOSFET engineering.
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Z." last="Mitrovic">I. Z. Mitrovic</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Liverpool, Department of Electrical Engineering & Electronics, Brownlow Hill</s1><s2>Liverpool L69 3GJ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 3GJ</wicri:noRegion></affiliation></author><author><name sortKey="Althobaiti, M" sort="Althobaiti, M" uniqKey="Althobaiti M" first="M." last="Althobaiti">M. Althobaiti</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Liverpool, Department of Physics, Brownlow Hill</s1><s2>Liverpool L69 7ZD</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 7ZD</wicri:noRegion></affiliation></author><author><name sortKey="Weerakkody, A D" sort="Weerakkody, A D" uniqKey="Weerakkody A" first="A. D." last="Weerakkody">A. D. Weerakkody</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Liverpool, Department of Electrical Engineering & Electronics, Brownlow Hill</s1><s2>Liverpool L69 3GJ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 3GJ</wicri:noRegion></affiliation></author><author><name sortKey="Sedghi, N" sort="Sedghi, N" uniqKey="Sedghi N" first="N." last="Sedghi">N. Sedghi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Liverpool, Department of Electrical Engineering & Electronics, Brownlow Hill</s1><s2>Liverpool L69 3GJ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 3GJ</wicri:noRegion></affiliation></author><author><name sortKey="Hall, S" sort="Hall, S" uniqKey="Hall S" first="S." last="Hall">S. Hall</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Liverpool, Department of Electrical Engineering & Electronics, Brownlow Hill</s1><s2>Liverpool L69 3GJ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 3GJ</wicri:noRegion></affiliation></author><author><name sortKey="Dhanak, V R" sort="Dhanak, V R" uniqKey="Dhanak V" first="V. R." last="Dhanak">V. R. Dhanak</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Liverpool, Department of Physics, Brownlow Hill</s1><s2>Liverpool L69 7ZD</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 7ZD</wicri:noRegion></affiliation></author><author><name sortKey="Chalker, P R" sort="Chalker, P R" uniqKey="Chalker P" first="P. R." last="Chalker">P. R. Chalker</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Engineering, University of Liverpool, Brownlow Hill</s1><s2>Liverpool L69 3GH</s2><s3>GBR</s3><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Liverpool L69 3GH</wicri:noRegion></affiliation></author><author><name sortKey="Henkel, C" sort="Henkel, C" uniqKey="Henkel C" first="C." last="Henkel">C. Henkel</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>KTH Royal Institute of Technology, School of ICT, Electrum 229</s1><s2>164 40 Kista</s2><s3>SWE</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>164 40 Kista</wicri:noRegion></affiliation></author><author><name sortKey="Dentoni Litta, E" sort="Dentoni Litta, E" uniqKey="Dentoni Litta E" first="E." last="Dentoni Litta">E. Dentoni Litta</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>KTH Royal Institute of Technology, School of ICT, Electrum 229</s1><s2>164 40 Kista</s2><s3>SWE</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>164 40 Kista</wicri:noRegion></affiliation></author><author><name sortKey="Hellstrom, P E" sort="Hellstrom, P E" uniqKey="Hellstrom P" first="P.-E." last="Hellström">P.-E. Hellström</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>KTH Royal Institute of Technology, School of ICT, Electrum 229</s1><s2>164 40 Kista</s2><s3>SWE</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>164 40 Kista</wicri:noRegion></affiliation></author><author><name sortKey="Ostling, M" sort="Ostling, M" uniqKey="Ostling M" first="M." last="Östling">M. Östling</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>KTH Royal Institute of Technology, School of ICT, Electrum 229</s1><s2>164 40 Kista</s2><s3>SWE</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>164 40 Kista</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Microelectronic engineering</title><title level="j" type="abbreviated">Microelectron. eng.</title><idno type="ISSN">0167-9317</idno><imprint><date when="2013">2013</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Microelectronic engineering</title><title level="j" type="abbreviated">Microelectron. eng.</title><idno type="ISSN">0167-9317</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Angular variation</term><term>Atomic layer epitaxial growth</term><term>Atomic layer method</term><term>Band offset</term><term>Core levels</term><term>Critical points</term><term>Dielectric function</term><term>Electrical measurement</term><term>Energy gap</term><term>Extreme ultraviolet radiation</term><term>Ge-Si alloys</term><term>Germanium</term><term>Interfaces</term><term>MOSFET</term><term>Multilayers</term><term>Optical characteristic</term><term>Optical properties</term><term>Permittivity</term><term>Shallow level</term><term>Spectroscopic ellipsometry</term><term>Stacking sequence</term><term>Stacks</term><term>Thulium</term><term>Transistor gate</term><term>Ultrathin films</term><term>Valence bands</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique optique</term><term>Propriété optique</term><term>Fonction diélectrique</term><term>Grille transistor</term><term>Méthode couche atomique</term><term>Méthode ALE</term><term>Spectre photoélectron RX</term><term>Niveau peu profond</term><term>Niveau coeur</term><term>Mode empilement</term><term>Empilement</term><term>Bande valence</term><term>Discontinuité bande</term><term>Rayonnement UV extrême</term><term>Variation angulaire</term><term>Ellipsométrie spectroscopique</term><term>Bande interdite</term><term>Point critique</term><term>Constante diélectrique</term><term>Mesure électrique</term><term>Transistor MOSFET</term><term>Interface</term><term>Germanium</term><term>Thulium</term><term>Multicouche</term><term>Couche ultramince</term><term>Alliage Ge Si</term><term>7867</term><term>8530T</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper investigates the band line-up and optical properties (dielectric function) of Tm<sub>2</sub>O<sub>3</sub>/Ge gate stacks deposited by atomic layer deposition. X-ray photoelectron spectroscopy has been performed to ascertain the shallow core levels (Ge3d and Tm4d) in ultra-thin and bulk Tm<sub>2</sub>O<sub>3</sub>/Ge stacks as well as valence band maxima in Ge and bulk Tm<sub>2</sub>O<sub>3</sub>. The valence band offset of Tm<sub>2</sub>O<sub>3</sub>/Ge has been found to be 2.95 ± 0.08 eV. Vacuum ultra violet variable angle spectroscopic ellipsometry studies reveal the indirect band gap nature of Tm<sub>2</sub>O<sub>3</sub>, with the value extracted from the Tauc method of 5.3 ± 0.1 eV. A distinct absorption feature is observed at ∼3.2 eV below the band gap of Tm<sub>2</sub>O<sub>3</sub>, and clearly distinguished from the Si and Ge critical points. A dielectric constant of 14 to 15 has been derived from the electrical measurements on 5 nm Tm<sub>2</sub>O<sub>3</sub>/epi Ge/Si gate stacks. The band line-up study of Tm<sub>2</sub>O<sub>3</sub>/Ge implies an acceptable barrier for holes (2.95 eV) and electrons (greater than 1.7 eV) for Ge MOSFET engineering.</div></front></TEI><affiliations><list><country><li>Royaume-Uni</li><li>Suède</li></country></list><tree><country name="Royaume-Uni"><noRegion><name sortKey="Mitrovic, I Z" sort="Mitrovic, I Z" uniqKey="Mitrovic I" first="I. Z." last="Mitrovic">I. Z. Mitrovic</name></noRegion><name sortKey="Althobaiti, M" sort="Althobaiti, M" uniqKey="Althobaiti M" first="M." last="Althobaiti">M. Althobaiti</name><name sortKey="Chalker, P R" sort="Chalker, P R" uniqKey="Chalker P" first="P. R." last="Chalker">P. R. Chalker</name><name sortKey="Dhanak, V R" sort="Dhanak, V R" uniqKey="Dhanak V" first="V. R." last="Dhanak">V. R. Dhanak</name><name sortKey="Hall, S" sort="Hall, S" uniqKey="Hall S" first="S." last="Hall">S. Hall</name><name sortKey="Sedghi, N" sort="Sedghi, N" uniqKey="Sedghi N" first="N." last="Sedghi">N. Sedghi</name><name sortKey="Weerakkody, A D" sort="Weerakkody, A D" uniqKey="Weerakkody A" first="A. D." last="Weerakkody">A. D. Weerakkody</name></country><country name="Suède"><noRegion><name sortKey="Henkel, C" sort="Henkel, C" uniqKey="Henkel C" first="C." last="Henkel">C. Henkel</name></noRegion><name sortKey="Dentoni Litta, E" sort="Dentoni Litta, E" uniqKey="Dentoni Litta E" first="E." last="Dentoni Litta">E. Dentoni Litta</name><name sortKey="Hellstrom, P E" sort="Hellstrom, P E" uniqKey="Hellstrom P" first="P.-E." last="Hellström">P.-E. Hellström</name><name sortKey="Ostling, M" sort="Ostling, M" uniqKey="Ostling M" first="M." last="Östling">M. Östling</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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